| PART |
Description |
Maker |
| PDTA123JEF PDTA123JE115 PDTA123JM PDTA123JK PDTA12 |
PNP resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm
|
NXP Semiconductors N.V.
|
| PUMB1 PEMB1 |
PNP-PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm PNP-PNP配电阻型晶体管，R1=22千欧姆，R2=22千欧
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PNP/PNP resistor-equipped transistors; R1 = 22 k楼?, R2 = 22 k楼?
|
NXP Semiconductors N.V.
|
| PDTA144TEF PDTA144TM |
PNP resistor-equipped transistors; R1 = 47 kohm, R2 = open 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
|
NXP Semiconductors N.V.
|
| PDTA114TU PDTA114TS PDTA114TE PDTA114TT PDTA114TU1 |
PNP resistor-equipped transistors; R1 = 10 kW, R2 = open
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open PNP配电阻型晶体管；R1=10千欧姆，R2=开
|
NXP Semiconductors N.V.
|
| PEMB3 PEMB3_1 |
PNP resistor-equipped double transistor R1 = 4.7 kohm/ R2 = open
PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open
From old datasheet system
|
Philips Semiconductors
NXP Semiconductors
|
| PEMB1 PEMB1_1 |
From old datasheet system
PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm
PNP resistor-equipped transistors; R1 = 22 kohm/ R2 = 22 kohm
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
|
NXP Semiconductors N.V.
|
| PEMB30 |
PNP/PNP double resistor-equipped transistors
|
Philips Semiconductors
|
| PDTA124ES |
PNP resistor-equipped transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTA143XE PDTA143XK |
PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW
|
NXP Semiconductors
|
| PDTA123JMB |
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
|
NXP Semiconductors
|
